10 business days
Positron Annihilation Spectroscopy (PAS) utilizes a mono-energetic variable energy beam ranging from 0.01 keV to 70 keV to detect vacancy and vacancy-related defects in materials. This advanced technique operates with high sensitivity, enabling the detection of defects at concentrations as low as 10^-7 per atom, and provides depth resolution of 10 to 20 micrometers, depending on material density. Two high purity Ge detectors facilitate measurements, delivering an energy resolution of 1.4 keV at 511 keV and allowing for Doppler Broadening and Positronium detection. With a capability to analyze samples at temperatures ranging from 10 K to 1300 K, PAS accommodates various experimental setups, including in situ tests influenced by temperature, illumination, and electric fields. Users can benefit from detailed insight into material properties, fostering improved material design and defect characterization for applications across semiconductor and photovoltaic technologies.
| Features | Specifications |
|---|---|
| Type | Positron Annihilation Spectrometer |
| Beam Energy Range | 0.01 keV to 70 keV |
| Probing Depth | 10 to 20 micrometers |
| Sensitivity | 10^-7 to 10^-3 per atom |
| Detectors | Two high purity Ge detectors |
| Energy Resolution | 1.4 keV at 511 keV |
| Temperature Range | 10 K to 1300 K |
| Techniques | Standard Doppler Broadening, Coincident Doppler Broadening, Positronium Detection, Beam Based Lifetime Measurements |
| Lifetime Resolution | approximately 400 ps |
| Channel Array | up to 65,000 channels |
| Time Resolution | <10 ps/channel |
| Depth Profiling | measured to several micrometers |
| In Situ Conditions | Temperature, illumination, or electric fields |
Not seeing what you need? Contact us for a custom job.
Back