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The Hitachi S-4800 Scanning Electron Microscope (SEM) delivers impressive high-resolution low voltage imaging with resolutions of 1.0 nm at 15 kV and 1.4 nm at 1 kV. This advanced imaging capability allows users to explore intricate surface details with a maximum magnification range from 100x to an astounding 800,000x, making it ideal for both low and high magnification studies. The SEM is equipped with an electron gun of cold field emission type, enabling beam deceleration at ultra-low landing voltages between 100-500 V, which is essential for examining shallow surface topographies without damaging the samples. Additionally, its Energy Dispersive Spectroscopy (EDS) capability, featuring a large area silicon drift detector, enhances the tool's versatility by providing real-time elemental analysis. Users benefit from the instrument's comprehensive training and support, ensuring they can confidently operate the sophisticated technology for precise imaging and materials characterization.
| Features | Specifications |
|---|---|
| High Resolution Low Voltage imaging | 1.0 nm resolution at 15 kV, WD=4mm |
| High Resolution Low Voltage imaging | 1.4 nm resolution at 1 kV, WD=1.5mm, Deceleration mode |
| High Resolution Low Voltage imaging | 2.0 nm resolution at 1 kV, WD=1.5mm, Normal mode |
| Beam deceleration | ultra-low landing voltages (100-500 V) for shallow surface topography |
| Controlled signal mixing | combination of secondary electron and back scattered electron |
| Pure BSE imaging | imaging at low voltages |
| Electron gun | cold field emission type |
| High magnification mode | 100x to 800,000x |
| Low magnification mode | 30x to 2,000x |
| Accelerating Voltage range | 0.5 to 30 kV in 100V steps |
| Maximum sample size | 4 inches in diameter |
| EDS capability | Oxford’s Ultim Max 100mm 2 large area silicon drift detector |
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